| Datasheet | |
|---|---|
| Design | |
| Packaging unit | |
| Producer | |
| Article type |
DIW075M065 Diotec Semiconductor
IGBT, TO-247-3L, N-Fast, 650V, 50A
Product Features
| Collector Emitter Voltage S | |
| VCES | 650 V |
| DC Collector Current 100°C | |
| IC100 | 75 A |
| Peak Collector Current | |
| ICM | 300 A |
| Polarity | |
| pol | N-Medium Fast |
| Junction Temperature | |
| Tjmax | 175 °C |
| Power Dissipation | |
| Ptot | 330.000 W |
| Gate Emitter Threshold Voltage | |
| VGEthmin | 3.5 V |
| VGEth | 5.0 V |
| VGEthmax | 6.5 V |
| Collector Emitter Saturation Voltage | |
| VCEsat100 | 1.45 V |
| @ IC100 | 75 A |
| @ VGE | 15 V |
| Turn-On Time | |
| ton | 116 ns |
| Turn-Off Time | |
| ton | 116 ns |
Related products
IGBT (Insulated Gate Bipolar Transistors)
IGBT, TO-247-3L, N-Fast, 650V, 50A
IGBT (Insulated Gate Bipolar Transistors)
IGBT, TO-247-3L, N-Fast, 1350V, 40A
IGBT (Insulated Gate Bipolar Transistors)
IGBT, TO-247-3L, N-Fast, 1200V, 40A
IGBT (Insulated Gate Bipolar Transistors)
IGBT, TO-247-3L, N-Fast, 1350V, 30A
IGBT (Insulated Gate Bipolar Transistors)
IGBT, TO-247-3L, N-Fast, 650V, 50A