| Datasheet | |
|---|---|
| Design | |
| Packaging unit | |
| Producer | |
| Article type |
GBI10J-T Diotec Semiconductor
Bridge, 1-ph, GBI, 600V, 10A, 150°C
Product Features
| Repetitive Peak Reverse Voltage | |
| VRRM | 600 V |
| Maximum Average Forward Rectified Current | |
| IFAV | 10.00 A |
| Junction Temperature | |
| Tjmax | 150 °C |
| Reverse Recovery Time | |
| trr | ns |
| Peak Forward Surge Current | |
| IFSM | 180 A |
| Forward Voltage | |
| VF | V |
| @ IF | A |
| Leakage Current | |
| IR | 5.000 µA |
| @ VR | 600 V |
| Junction Capacitance | |
| IR | 5.000 µA |
| @ VR | 600 V |
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